Please use this identifier to cite or link to this item:
http://148.72.244.84/xmlui/handle/xmlui/12557Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Intessar, K.Abd | - |
| dc.date.accessioned | 2024-03-13T09:00:57Z | - |
| dc.date.available | 2024-03-13T09:00:57Z | - |
| dc.date.issued | 2010 | - |
| dc.identifier.issn | 2222-8373 | - |
| dc.identifier.uri | http://148.72.244.84:8080/xmlui/handle/xmlui/12557 | - |
| dc.description.abstract | These papers study the operation of etching poly-silicon wafer by using CF3Br plasma under condition 40mT, 1500 volt. Obtained on directional etching (anisotropic etching) with less selectivity, the directional etching caused lattice damages on the surface of the wafer. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | university of Diyala | en_US |
| dc.title | Anisotropic etching of poly-silicon wafer by using CF3Br plasma | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 368-374 E.pdf | 309.38 kB | Adobe PDF | View/Open |
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