Please use this identifier to cite or link to this item: http://148.72.244.84/xmlui/handle/xmlui/3928
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dc.contributor.authorAmmar T. Salih-
dc.contributor.authorKadhim R. Gbashi-
dc.contributor.authorTawfeeq Kadhem Salman-
dc.date.accessioned2023-10-17T07:04:22Z-
dc.date.available2023-10-17T07:04:22Z-
dc.date.issued2018-
dc.identifier.citationhttp://dx.doi.org/10.24237/djps.1401.331Cen_US
dc.identifier.issn2222-8373-
dc.identifier.urihttp://148.72.244.84:8080/xmlui/handle/xmlui/3928-
dc.description.abstractUniform layers of SiO2 were prepared using thermal evaporation technique under high vacuum (10-5 mbar). Many characterizations were investigated using these films as antireflective layers. The morphological, crystal structural and optical properties of the layers were investigated by using SEM, XRD, and UV-Vis instruments.en_US
dc.description.sponsorshiphttps://djps.uodiyala.edu.iq/en_US
dc.language.isoenen_US
dc.publisheruniversity of Diyalaen_US
dc.subjectthin films, thermal evaporation, SiO2, antireflectionen_US
dc.titlePreparation and Characterization of SiO2 Thin Films as an Antireflective Layeren_US
dc.typeArticleen_US
Appears in Collections:مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.)

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