Effect of Sn Doping on Structural Properties of ZnO Thin Films Prepared by Atmospheric Pressure Chemical Vapor Deposition Method

Abstract

Undoped and Sn-doped Zinc Oxide (ZnO) thin films with doping percentage (1,3,5)% with thickness (400±20)nm which deposited on glass substrates at temperature (400°C) have been prepared by atmospheric pressure chemical vapor deposition method, The effect change of doping percentage on the structural properties for all prepared films were studied. XRD investigations results showed that all prepared films were polycrystalline in nature and had a hexagonal structure with preferred orientation along (002) plane, and we found that the increase in doping percentage lead to increase the crystallite size as well improve the crystal structure for all prepared films expect the film which prepared with doping percentage (3%) where the crystallite size decreases at this doping percentage and then the crystallite size increasing when the doping percentage increases, The lattice constants, dislocation density and number of crystals per unit area, microstrain, were calculated for all prepared films, also the results of atomic force microscope (AFM) showed that the values of root mean square and the surface roughness for all prepared films increases with the increase in doping percentage expect the film which prepared with doping percentage (3%) where the root mean square and the surface roughness decreases at this doping percentage and then the root mean square and the surface roughness increasing when the doping percentage increases. The (SEM) images show that the different surface morphologies for all the prepared films and the increasing in doping percentage leads to increase the crystallite sizes, we having a ratio of elements by (EDX) technique.