Effect of annealing and Mo , V and Ni Oxides as Doping Elements on Optical and Electrical Properties of BaTiO3 thin films

Abstract

In this work, BaTiO3 thin films pure and doped with oxides (MoO3,V2O5 and NiO) were deposited using pulsed laser deposition (PLD) technique with thickness equal to (300nm) on glass substrates at temperature equal to (573K). The effects of annealing at temperatures (673K,773K) and doping on the optical and electrical properties have been investigated. UVVIS transmittance measurements showed that the films are highly transparent in the nearinfrared region for as deposited films and in the visible region for annealing films at temperatures (673K,773K),while the absorption edge of BaTiO3 films doped with (MoO3,V2O5 and NiO) was shifted to the visible region. The optical energy gap was calculated and was found to be (3.6eV) for as deposited films, and this value increases from (3.69eV) to (3.8eV) with increasing annealing temperature from (673K) to (773K), and decreases with different elements oxides dopants. The optical constants such as refractive index, extinction coefficient and real and imaginary part of dielectric constant have been calculated. The electrical properties of these films were studied under different annealing temperatures and different doping materials. The d.c conductivity for all deposited films decreases from (1.36  10-7 ) (.cm)-1 to (6.18  10-6 ) (.cm)-1 and increase in activation energy with increase of annealing temperature, while the d.c conductivity increase and activation energy decreases with different elements oxides dopants .