Theoretical Model of Charge Transport Processes In Metal/ Semiconductor Interfaces

Abstract

The dynamics of charge transport across metal/semiconductor interface system are studied using a model that derives according to the quantum theory. We suppose continuum level model for donor state |߮↓ܦ < and acceptor state |߮↓ܣ < . Marcus– Hush semi classical theory adapted to evaluated the reorientation free energy. The rate constant of charge transfer are calculated with assume a continuum level model .Our result for calculation of rate constant of charge transfer show a good agreement with experimental data. the ratio of rate thus agreement with result ≈ 1 [28] ,indicated the system Au/ GaAs is active media for applied in devices technology according with Au/ InAs system.