Fabrication and study detector work in the visible region prepared by thermal evaporation

Abstract

In the present paper silicon p-n junction detector of 600 ± 25 nm peak response has been characterized. This peak was obtained by depositing high purity Pt metal thin film onto sensitive side of the p-n junction (donor-side), this film reduce the responsivety in the near-IR region (800-1100) nm and lead to peak response at 600 nm. The white light photovoltaic characteristics, spectral responsivity, and quantum efficiency are greatly depended on photon transmittion of Pt film .Experimental results showed that the detector responsivity in the near IR region was reduced to about 18.5% from its initial value after depositing 50 nm Pt film.