Please use this identifier to cite or link to this item: http://148.72.244.84/xmlui/handle/xmlui/14105
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dc.contributor.authorصباح انور سلمان-
dc.contributor.authorتحسين حسين مبارك-
dc.contributor.authorاسعد احمد كامل-
dc.date.accessioned2024-04-08T20:10:10Z-
dc.date.available2024-04-08T20:10:10Z-
dc.date.issued2006-
dc.identifier.citationhttp://148.72.244.84:8080/jspui/password-loginen_US
dc.identifier.issn1996-8752-
dc.identifier.urihttp://148.72.244.84:8080/xmlui/handle/xmlui/14105-
dc.description.abstractIt had been measuring the resistivity for the CuIn (Se0.2Te0.8)2 and CuIn (Se0.8Te0.2)2 thin films which perpetrated by vacuum thermal evaporation with a thickness of (225±5nm) in the thermal range of (300–473K) for both as deposited and annealed samples at temperatures (373K, 473K) for one hour in the existence vacuum (10-2Torr). It had been calculation activation energies for these films before and after annealing.en_US
dc.language.isootheren_US
dc.publisherمجلة الفتح للعلوم التربوية والنفسيةen_US
dc.relation.ispartofseries10;2-
dc.titleالرقيقة cu in se0.8 te0.2 .culn se0 te0.8 دراسة بعض الخواص الكهربائية لاغشيةen_US
dc.typeArticleen_US
Appears in Collections:مجلة الفتح / The Al-Fateh Journal for Educational and Psychological Research

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