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http://148.72.244.84/xmlui/handle/xmlui/9056
Title: | Effect of annealing and doping with (Mo , V and Ni) elements oxides on structural properties of BaTiO3 thin films |
Authors: | Sabah A. Salman |
Keywords: | BaTiO3 thin films, pulsed laser deposition , structural Properties, doping. |
Issue Date: | 2014 |
Publisher: | university of Diyala |
Abstract: | In this work, BaTiO3 thin films (pure and doped with oxides MoO3,V2O5 and NiO) were deposited using pulsed laser deposition (PLD) technique with thickness equal to (300nm) on glass and Si (111) substrates at temperature equal to (573K). The effects of annealing at temperatures (673K,773K and 873K) and doping on the structural properties have been investigated. XRD of pure and doped BaTiO3 pellets shows Polycrystalline structure, and exhibited tetragonal structure, with preferential direction (110). The structural properties of the BaTiO3 films prepared on glass substrates before and after annealing have been studied by using XRD technique, these tests show that all the films have amorphous structure at substrate temperature (573K) and after annealing at temperatures (673K,773K and 873K). But in case of Si (111) substrates, the XRD did not detect the crystalline phase before annealing, but annealing at temperature (873K), the XRD detected Polycrystalline structure, and exhibited tetragonal structure of BaTiO3 film . The same occurs with doping films. The surface morphology of all the deposited films was studied using atomic force microscope (AFM). The grain size of the nanoparticles observed at the surface depended on the annealing temperature, where annealing at temperature (873K) was the best temperature at the films deposits on Si (111) substrates. BaTiO3 films with doping ratio (0.1wt%) of NiO has the smallest grain size equal to (44.69nm). RMS roughness increased with increasing annealing temperature. |
URI: | http://148.72.244.84:8080/xmlui/handle/xmlui/9056 |
ISSN: | 2222-8373 |
Appears in Collections: | مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.) |
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